Iterative optimization of tail breaking force of 1mil wire thermosonic ball bonding processes and the influence of plasma cleaning

نویسندگان

  • J. Lee
  • M. Mayer
  • Y. Zhou
  • S. J. Hong
چکیده

An online tail breaking force measurement method is developed with a proximity sensor between wire clamp and horn. The wire under the tensile load measures about 1.5 cm extending from the bond location to the wire clamp. To increase the sensitivity, the bondhead speed is reduced to 2mm/s during breaking the tail bond. It takes roughly 10ms to break the tail bond. The force resolution of the method is estimated to be better than 5.2mN. An automatic wire bonder used to continuously bond up to 80-wire loops while recording the on-line proximity signals. All wires are directed perpendicular to the ultrasound direction. The tail breaking force for each bond is evaluated from the signal and shown automatically on the bonder within 2min after bonding. Results are obtained for a typical Au wire and a typical Cu wire bonding process. Both wires are 25mm in diameter and bonded on Ag plated diepads of standard leadframes at 220 1C. An average Cu tail breaking force of higher than 50mN is obtained if the leadframe is plasma cleaned before the bonding with 100% Ar for 5min. This result is comparable to that obtained with Au wire. The standard deviation of the Cu tail breaking force is about twice that obtained with Au wire. The tail breaking force depends on the bonding parameters, metallization variation, and cleanliness of the bond pad. The cleanliness of the bonding pad is more important with Cu wire than with Au wire. r 2007 Elsevier Ltd. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

In situ ultrasonic force signals during low-temperature thermosonic copper wire bonding

Ultrasonic in situ force signals from integrated piezo-resistive microsensors were used previously to describe the interfacial stick-slip motion as the most important mechanism in thermosonic Au wire ball bonding to Al pads. The same experimental method is applied here with a hard and a soft Cu wire type. The signals are compared with those obtained from ball bonds with standard Au wire. Prior ...

متن کامل

Online methods to measure breaking force of bonding wire using a CMOS stress sensor and a proximity sensor

Two real-time, in situmethods tomeasure the breaking force of fine bondingwireswhile on thewire bonder are reported and compared. The firstmethod uses a special test chipwith a piezoresistivemicrosensor integrated next to the bonding pad. A 25 m diameter Au wire piece is attached with a ball bond to the test pad of the microsensor. The wire piece between the ball bond and the lower edge of the ...

متن کامل

Effect of Temperature on Deformation Characteristics of Gold Ball Bond in Au-Al Thermosonic Wire Bonding

Wire bonding is a process that is used to form solid-state bonds to interconnect metals such as gold wires to metalized pads deposited on silicon integrated circuits. Typically, there are 3 main wire bonding techniques; Thermo-compression, Ultrasonic and Thermosonic. This experiment utilizes thermosonic bonding which applies heat, ultrasonic energy and force on an Au-Al system. Sixteen groups o...

متن کامل

Integrated Temperature Microsensors for Characterization and Optimization of Thermosonic Ball Bonding Process

A novel ball bond process optimization method based on a thermal signal from an integrated aluminum microsensor is reported. The in-situ temperature during the ball bonding is measured and analyzed. The ultrasonic period shows distinct features corresponding to the scrubbing of the ball on the pad and the intermetallic bond growth, and the ball deformation by ultrasonic softening. A peak of the...

متن کامل

In - Situ Ultrasonic Stress Measurements during Ball Bonding Using Integrated Piezoresistive Microsensors

Stress induced by ultrasonic dissipation during thermosonic ball bond formation is measured in-situ using microsensors integrated below test bonding pads. The devices are fabricated using a commercial CMOS process, exploiting p + diffusion as piezoresis-tive sensing material. We report time-dependent on-line measurements of the stress-induced resistance change. Higher harmonics of the microsens...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Microelectronics Journal

دوره 38  شماره 

صفحات  -

تاریخ انتشار 2007